Indiumfosfide (InP, formeel: indium(III)fosfide) is een binaire verbinding van indium en fosfor. De voornaamste toepassing ervan is die van halfgeleider. Het heeft een vlak gecentreerde kubische kristalvorm (type: zinkblende), identiek aan die van GaAs en veel andere III-V-halfgeleiders, verbindingen tussen elementen uit groep 13 van het periodiek systeem (aluminiumgroep) en groep …
Immersed in the realm of semiconductor industry, particularly in RF technology, is a binary compound known as Indium Phosphide (InP). This intriguing material, born from a harmonious marriage between indium and phosphorus, stands tall amidst other materials like silicon or gallium arsenide.
Download figure: Standard image High-resolution image In figure 11.1, for S-doped InP, the refractive index decreases with increase in wavelength, attains minima at ∼17 μm and subsequently increases.While these values are generally lower than the data reported in the literature, at room temperature, it must be noted that the temperature dependence of these …
III–V materials have long been studied for use in high performance electronic and optical systems. The maturation of epitaxial growth techniques has allowed researchers to grow compound semiconductors with nearly arbitrary compositions, exhibiting widely variable mechanical and electrical properties.
PITTSBURGH, March 25, 2024 (GLOBE NEWSWIRE) – Coherent Corp. (NYSE: COHR), a leading provider of compound semiconductors and high-performance optical networking solutions, announced today it has established the world''s first capability for 6-inch indium phosphide (InP) wafer fabrication, in the company''s Sherman, Texas, and Järfälla, Sweden, wafer fabs.
The structural, elastic and electronic properties of indium phosphide in zinc-blende and rock-salt structure under various pressures are studied using the first principle calculation based on the density functional theory with modified Becke–Johnson potential. The pressure-induced structural phase transition from zinc blende to rock salt is observed at 9.3 …
Indiumphosphid ist eine Halbleiterverbindung aus der Gruppe der binären III-V-Verbindungshalbleiter, die in der Hochfrequenztechnik für Laser für die dämpfungsarme langreichweitige Datenkommunikation um 1550 nm über Glasfaserkabel, in der Hochleistungselektronik sowie der Herstellung von Integrierten Schaltkreisen (Sandwich …
Many scholars have conducted related research about the thermodynamic calculations of the in-situ P injection technique in recent years, with notable contributions made by the team led by Niefeng Sun. Yang et al. [13] proposed the influence of melt temperature on the synthesis efficiency, highlighting that the optimum condition of synthesis was obtained by …
Indium Phosphide is a III-V compound semiconductor of increasing importance in high-speed electronics and optoelectronics. It is timely that a new and revised volume in the data reviews series has been published with Prof. T.P. Pearsall, a well-known worker in the field and author of a book on InGaAsP, as the editor. An earlier volume (No. 6) on InP in the same …
Indium Phosphide. R. Fornari, in Encyclopedia of Materials: Science and Technology, 2001 4 Electrical Properties of InP 4.1 Bandgap and Effective Masses. InP has a direct bandgap with the minimum at the Ɣ point. The behavior of the bandgap E as function of temperature is conveniently described by the empirical relation E(T)=E(0)−aT 2 /(T+b) where T is the absolute temperature, …
Explore the exciting future prospects of Indium Phosphide in semiconductor technology. This blog post delves into potential applications, highlighting how this material may revolutionize various industries. Stay ahead with leading-edge …
Crystallizing in the sphalerite structure, InP has a lattice parameter coinciding with the ternary and quaternary alloys required for laser transmission through the 1.3 and 1.5 μm wavelength windows in optical fiber.For example, InP has become the substrate of choice for lattice-matched growth of ternary GaInAs, and InAlAs and quaternary GaInAsP and AlGaInAs.
A summary of photonic integrated circuit (PIC) platforms is provided with emphasis on indium phosphide (InP). Examples of InP PICs were fabricated and characterized for free space laser communications, Lidar, and microwave photonics. A novel high-performance hybrid integration technique for merging InP devices with silicon photonics is also discussed.
1. Introduction. Indium phosphide (InP) is an important III–V semiconductor, it exists in two crystalline forms wurtzite (WZ) and zinc blende (ZB) with direct band gaps of 1.42 and 1.35 eV at room temperature, respectively, and is a highly promising candidate for construction of viable nano-integrated circuits [1–6].The nanoscale dimensions of InP in the …