An Insulated-gate bipolar transistor (IGBT) is a type of power semiconductor device that can handle a high voltage and a large current simultaneously. The IGBT's voltage-current product reached more than 5 × 10^5 W/cm^2, far exceeding the value of existing power devices like bipolar transistors and power MOSFETs.
IGBTs (Insulated Gate Bipolar Transistor) Application Note © 20 18-2022 10 2022-07-04 Toshiba Electronic Devices & Storage Corporation This causes conductivity modulation in which holes are injected from the p collector region to the n region, reducing the resistance across the n region.
Initially, IGBTs, which emerged from power MOSFETs technology, were formed by epitaxy and using what is known as the punch-through (PT) technique . The IGBT is a power semiconductor transistor based on four alternating layers (P-N-P-N), which are controlled by a metal-oxide-semiconductor (MOS) gate structure without regenerative action.
The idea behind this power device is to overcome the difficulty in increasing the power MOSFET current handling capability. The first IGBT concept has been presented in 1968 by Yamagami in his Japanese patent S47−21739 . Since then, many structures have been proposed. The first concept was based on the planar technology.
The IGBT's large safe operating area allows it to handle a product of voltage and current density exceeding 5 × 10^5 W/cm^2, which is much higher than that of other power devices like bipolar transistors and power MOSFETs.
Different types of IGBTs and their structures IGBTs can be divided into planar- gate and trench-gate IGBTs according to their gate structures, and into punch- through, non- punch-through, and thin- wafer punch- through IGBTs according to their vertical structures.
IGBT heeft het potentieel om andere schakelelementen te vervangen. ... er is geen energieopslagapparaat nodig bij het compenseren van blindvermogen en de vereiste capaciteit van het energieopslagapparaat bij het compenseren van harmonischen is niet groot; (4) zelfs als de gecompenseerde stroom te groot is, zal het elektrische actieve filter ...
characteristics of an IGBT: high-voltage and high-current density, good performances in switching, robustness. Initially, IGBTs, which emerged from power MOSFETs technology, were formed by epitaxy and using what is known as the punch-through (PT) technique [3]. INSULATED GATE BIPOLAR TRANSISTORS The IGBT is a power semiconductor transistor based on
• IGBT is a mature and proven technology with future potential • HV-Diodes have Trade-offs and need to be adapted to the application • Different Generations of IGBTs offer Pros and Cons • Various Applications have different requirements • 3 …